Anisotropic AC conductivity of strained graphene
arXiv:1311.1790 · doi:10.1088/0953-8984/26/12/125302
Abstract
The density of states and the AC conductivity of graphene under uniform strain are calculated using a new Dirac Hamiltonian that takes into account the main three ingredients that change the electronic properties of strained graphene: the real displacement of the Fermi energy, the reciprocal lattice strain and the changes in the overlap of atomic orbitals. Our simple analytical expressions of the density of states and the AC conductivity generalizes previous expressions only available for uniaxial strain. The results suggest a way to measure the Gruneisen parameter that appears in any calculation of strained graphene, as well as the emergence of a sort of Hall effect due to shear strain.
In previous version of our work, a term was missing in equation (17). In version 2, the expression for the AC conductivity of graphene under uniform strain (equation (17)) is corrected. (A corrigendum has been sent to J. Phys.: Condens. Matter)
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- Topological edge states on time-periodically strained armchair graphene nanoribbons
- Dynamical band gap tuning in Weyl semi-metals by intense elliptically polarized normal illumination and its application to borophene
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- Coupled Mode Theory of Optomechanical Crystals
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- Effect of resonant impurity scattering of carriers on Drude peak broadening in uniaxially strained graphene
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