Large displacement strain theory and its application to graphene
arXiv:1404.0130 · doi:10.1103/PhysRevB.90.045201
Abstract
Under the application of a force, a material will deform and, hence, the crystal lattice will experience strain. This induced strain will alter the electronic properties of the material. In particular, strain in graphene generates an artificial vector potential which, if spatially varying, admits a pseudo-magnetic field. Current theories for spatially varying strain use linear or finite strain theory whose derivation is based on small displacements of infinitesimal length vectors. Here we apply a differential geometry method to derive a strain theory for large displacements of finite length vectors. This method gives a finite displacement term whose contribution is comparable to that of the linear strain term. Further to this, we show that a 'domain wall'-like pseudo-magnetic field profile can be generated when a wide graphene ribbon is subjected to a pair of opposing point forces (point stretch). The resulting field is a function of the new finite displacement term only and displays a maximum strength of over three times that which is predicted by the linear strain theory. These results extend the current theories of strain, which are based on the transformation of infinitesimal length vectors, to finite length vectors, thus providing an accurate description of pseudo-magnetic field structures in strained materials.
arXiv commentUpdated to journal version with revised figure 3 and new title. 7 pages, 5 figures
References in corpus (21)
- The electronic properties of graphene
- Electronic transport in two dimensional graphene
- Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
- A tight-binding approach to uniaxial strain in graphene
- Electronic and Magnetic Properties of Nanographite Ribbons
- Properties of Graphene: A Theoretical Perspective
- All-graphene integrated circuits via strain engineering
- Electronic structure of epitaxial graphene layers on SiC: effect of the substrate
- Effects of Strain on Electronic Properties of Graphene
- Graphene for spintronics: giant Rashba splitting due to hybridization with Au
- Electronic properties of mesoscopic graphene structures: charge confinement and control of spin and charge transport
- Optical Properties of Strained Graphene
- Pseudo magnetic field in strained graphene: revisited
- Band gap tunning in BN-doped graphene systems with high carrier mobility
- Nano-engineered non-uniform strain in graphene
- Lattice-corrected strain-induced vector potentials in graphene
- Strain gauge fields for rippled graphene membranes under central mechanical load: an approach beyond first-order continuum elasticity
- Electronic states in a graphene flake strained by a Gaussian bump
- Strain-engineering of graphene's electronic structure beyond continuum elasticity
- Strain engineered graphene using a nanostructured substrate: II Pseudo-magnetic fields
- Enhanced Optical Dichroism of Graphene Nanoribbons