Exciton binding energies and luminescence of phosphorene under pressure

Abstract

The optical response of phosphorene can be gradually changed by application of moderate uniaxial compression, as the material undergoes the transition into an indirect gap semiconductor and eventually into a semimetal. Strain tunes not only the gap between the valence band and conduction band local extrema, but also the effective masses, and in consequence, the exciton anisotropy and binding strength. In this article, we consider from a theoretical point of view how the exciton stability and the resulting luminescence energy evolves under uniaxial strain. We find that the exciton binding energy can be as large as 0.87 eV in vacuum for 5% transverse strain, placing it amongst the highest for 2D materials. Further, the large shift of the luminescence peak and its linear dependence on strain suggest that it can be used to probe directly the strain state of single-layers.

arXiv comment6 pages, 5 figures

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Cited by in corpus (18)

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• Strong many-body interactions in ultrathin anisotropic tin (II) monosulfide
• Excitonic effects in two-dimensional semiconductors: Path integral Monte Carlo approach
• Excitons and optical spectra of phosphorene nanoribbons
• Quantum Monte Carlo calculations of energy gaps from first principles
• $k\cdot p$ theory for phosphorene: Effective g-factors, Landau levels, and excitons
• Role of Interlayer Coupling on the Evolution of Band Edges in Few-Layer Phosphorene
• Layer-dependent pressure effect on electronic structures of 2D black phosphorus
• Anisotropic effects in two-dimensional materials
• Optical Properties of Anisotropic Excitons in Phosphorene
• Excitons in Phosphorene: A Semi-Analytical Perturbative Approach
• Ab initio study of electromagnatic modes in two-dimensional semiconductors: Application to doped phosphorene
• Phosphorene as a nanoelectromechanical material
• Computing Optical Properties of Ultra-thin Crystals
• Electrostatic quantum dot confinement in phosphorene
• Low-dimensional quantum systems
• Exciton localization on p-i-n junctions in two-dimensional crystals