Excitons in anisotropic 2D semiconducting crystals

Abstract

The excitonic behavior of anisotropic two-dimensional crystals is investigated using numerical methods. We employ a screened potential arising due to the system polarizability to solve the central-potential problem using the Numerov approach. The dependence of the exciton energies on the interaction strength and mass anisotropy is demonstrated. We use our results to obtain the exciton binding energy in phosphorene as a function of the substrate dielectric constant.

7 pages, 7 figures

References in corpus (6)

• Electric Field Effect in Atomically Thin Carbon Films
• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors
• Strain-Engineering Anisotropic Electrical Conductance of Phosphorene and Few-Layer Black Phosphorus
• Strain engineered direct-indirect band gap transition and its mechanism in 2D phosphorene
• Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization

Cited by in corpus (6)

• Oxygen defects in phosphorene
• The Electronic Properties of Phosphorene/Graphene and Phosphorene/Hexagonal Boron Nitride Heterostructures
• Tuning of the electronic and optical properties of single layer black phosphorus by strain
• Anisotropic exciton Stark shift in black phosphorus
• Exciton binding energies and luminescence of phosphorene under pressure
• Unambiguous identification of monolayer phosphorene by phase-shifting interferometry