Strain engineering the charged-impurity-limited carrier mobility in phosphorene

Abstract

We investigate, based on the tight-binding model and in the linear deformation regime, the strain dependence of the electronic band structure of phosphorene, exposed to a uniaxial strain in one of its principle directions, the normal, the armchair and the zigzag directions. We show that the electronic band structure of strained phosphorene, for experimentally accessible carrier densities and uniaxial strains, is well described by a strain-dependent decoupled electron-hole Hamiltonian. Then, employing the decoupled Hamiltonian, we consider the strain dependence of the charged-impurity-limited carrier mobility in phosphorene, for both types of carrier, arbitrary carrier density and in both armchair and zigzag directions. We show that a uniaxial tensile (compressive) strain in the normal direction enhances (weakens) the anisotropy of the carrier mobility, while a uniaxial strain in the zigzag direction acts inversely. Moreover applying a uniaxial strain in the armchair direction is shown to be ineffective on the anisotropy of the carrier mobility. These will be explained based on the effect of the strain on the carrier effective mass.

31 pages, 7 figures; accepted for publication in Superlattices and Microstructures journal

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• Straintronics in Phosphorene: Tensile vs Shear Strains and Their Combinations for Manipulating the Band Gap
• Plasmon modes in monolayer and double-layer black phosphorus under applied uniaxial strain
• Strain- and doping-tunable optical resonance in Kekulé-Y graphene