Disorder effect on the anisotropic resistivity of phosphorene determined by a tight-binding model

Abstract

In this work we develop a compact multi-orbital tight-binding model for phosphorene that accurately describes states near the main band gap. The model parameters are adjusted using as reference the band structure obtained by a density-functional theory calculation with the hybrid HSE06 functional. We use the optimized tight-binding model to study the effects of disorder on the anisotropic transport properties of phosphorene. In particular, we evaluate how the longitudinal resistivity depends on the lattice orientation for two typical disorder models: dilute scatterers with high potential fluctuation amplitudes, mimicking screened charges in the substrate, and dense scatterers with lower amplitudes, simulating weakly bounded adsorbates. We show that the intrinsic anisotropy associated to the band structure of this material, although sensitive to the type and intensity of the disorder, is robust.

arXiv comment11 pages, 8 figures

References in corpus (27)

• The electronic properties of graphene
• Black phosphorus field-effect transistors
• Phosphorene: A New 2D Material with High Carrier Mobility
• High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
• Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics
• Strain-induced gap modification in black phosphorus
• Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation
• Strain-Engineering Anisotropic Electrical Conductance of Phosphorene and Few-Layer Black Phosphorus
• Semiconducting layered blue phosphorus: A computational study
• Environmental instability of few-layer black phosphorus
• Tunable optical properties of multilayers black phosphorus thin films
• Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus
• Oxygen defects in phosphorene
• Accessing the transport properties of pristine few-layer black phosphorus by van der Waals passivation in inert atmosphere
• Defect in Phosphorene
• The recursive Green's function method for graphene
• Toward a realistic description of multilayer black phosphorus: from $GW$ approximation to large-scale tight-binding simulations
• Electrons and holes in phosphorene
• Anomalously large conductance fluctuations in weakly disordered graphene
• Scaling laws for band gaps of phosphorene nanoribbons: A tight-binding calculation
• Transport and Optical Properties of Single- and Bilayer Black Phosphorus with Defects
• Critical delocalization of chiral zero energy modes in graphene
• A tight-binding model for MoS${}_2$ monolayers
• Mobility anisotropy in monolayer black phosphorus due to charged impurities
• Nonlocal Response and Anamorphosis: the Case of Few-Layer Black Phosphorus
• Theoretical Study of Phosphorene Tunneling Field Effect Transistors
• Edge State and Intrinsic Hole Doping in Bilayer Phosphorene

Cited by in corpus (9)

• Optical Properties of Anisotropic Excitons in Phosphorene
• Understanding disorder in 2D materials: the case of carbon doping of Silicene
• Pseudospin Electronics in Phosphorene Nanoribbons
• Influence of electric and magnetic fields and $\sigma$-edge bands on the electronic and optical spectra of graphene nanoribbons
• Magnetoexcitons in phosphorene monolayers, bilayers, and van der Waals heterostructures
• Resonant tunneling through protected quantum dots at phosphorene edges
• Electronic structure and transport in materials with flat bands: 2D materials and quasicrystals
• Electric field tunable magnetoexcitons in Xenes-hBN-TMDC, Xenes-hBN-BP, and Xenes-hBN-TMTC heterostructures
• Tight Binding Parametrization of Few-layer Black Phosphorus from First-Principles Calculations