Edge State and Intrinsic Hole Doping in Bilayer Phosphorene

Abstract

Using a simple LCAO model by Harrison, we have qualitatively studied the edge state of bilayer phosphorene, which is a unit structure of the layered crystal of black phosphorus. This model successfully reproduces the isolated edge state in the bulk gap in monolayer phosphorene. In bilayer phosphorene, however, it shows that edge states are almost buried in the valence band and there is no isolated midgap edge state at the zigzag edge. Since the buried edge state works as acceptor, holes are doped from the edge state into the bulk. This gives a possible explanation for p-type conduction in undoped black phosphorus. Under the vertical electric field, the intrinsic hole doping is reduced because a part of edge states move into the gap. These features of bilayer phosphorene might be better suited for device application.

4 figures

References in corpus (5)

• Strain-Engineering Anisotropic Electrical Conductance of Phosphorene and Few-Layer Black Phosphorus
• Strain engineered direct-indirect band gap transition and its mechanism in 2D phosphorene
• Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus
• Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization
• Electrically Tunable Quasi-Flat Bands, Conductance and Field Effect Transistor in Phosphorene

Cited by in corpus (1)

• Disorder effect on the anisotropic resistivity of phosphorene determined by a tight-binding model