Understanding disorder in 2D materials: the case of carbon doping of Silicene

Abstract

We investigate the effect of lattice disorder and local correlation effects in finite and periodic silicene structures caused by carbon doping using first-principles calculations. For both finite and periodic silicene structures, the electronic properties carbon-doped monolayers are dramatically changed by controlling the doping sites in the structures, which is related to the amount of disorder introduced in the lattice and electron-electron correlation effects. By changing the position of the carbon dopants, we found that a Mott-Anderson transition is achieved. Moreover, the band gap is determined by the level of lattice disorder and electronic correlation effects. Finally, these structures are ferromagnetic even under disorder which has potential applications in Si-based nanoelectronics, such as field-effect transistors (FETs).

10 pages, 6 figures

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• Anderson Transitions
• Graphene Spintronics
• Charged Impurity Scattering in Graphene
• Electronic structure of silicon-based nanostructures
• Zero modes of tight binding electrons on the honeycomb lattice
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Cited by in corpus (1)

• DFT study of tunable electronic, magnetic, thermal, and optical properties of a Ga${}_2$Si${}_6$ monolayer