Doping Mechanisms in Graphene-MoS2 Hybrids

Abstract

We present a joint theoretical and experimental investigation of charge doping and electronic potential landscapes in hybrid structures composed of graphene and semiconducting single layer MoS2. From first-principles simulations we find electron doping of graphene due to the presence of rhenium impurities in MoS2. Furthermore, we show that MoS2 edges give rise to charge reordering and a potential shift in graphene, which can be controlled through external gate voltages. The interplay of edge and impurity effects allows the use of the graphene-MoS2 hybrid as a photodetector. Spatially resolved photocurrent signals can be used to resolve potential gradients and local doping levels in the sample.

11 pages, 7 figures

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• Electronic transport in graphene-based heterostructures
• Midgap states and band gap modification in defective graphene/h-BN heterostructures
• Understanding disorder in 2D materials: the case of carbon doping of Silicene
• Dirac-Source Diode with Sub-unity Ideality Factor
• Rashba Sandwiches with Topological Superconducting Phases
• Ag and Au Atoms Intercalated in Bilayer Heterostructures of Transition Metal Dichalcogenides and Graphene
• Three-Dimensional Fractional Topological Insulators in Coupled Rashba Layers
• Time-Reversal Invariant Topological Superconductivity in Planar Josephson Bijunction
• From Coupled Rashba Electron and Hole Gas Layers to 3D Topological Insulators
• Proximity-induced topological transition and strain-induced charge transfer in graphene/MoS2 bilayer heterostructures
• A back-to-back diode model applied to MoS2 van der Waals Schottky diodes
• Spin relaxation and the Kondo effect in transition metal dichalcogenide monolayers