Spin relaxation and the Kondo effect in transition metal dichalcogenide monolayers

Abstract

We investigate the spin relaxation and Kondo resistivity caused by magnetic impurities in doped transition metal dichalcogenides monolayers. We show that momentum and spin relaxation times due to the exchange interaction by magnetic impurities, are much longer when the Fermi level is inside the spin split region of the valence band. In contrast to the spin relaxation, we find that the dependence of Kondo temperature $T_K$ on the doping is not strongly affected by the spin-orbit induced splitting, although only one of the spin species are present at each valley. This result, which is obtained using both perturbation theory and poor man's scaling methods, originates from the intervalley spin-flip scattering in the spin-split region. We further demonstrate the decline in the conductivity with temperatures close to $T_K$ which can vary with the doping. Our findings reveal the qualitative difference with the Kondo physics in conventional metallic systems and other Dirac materials.

20 pages, 5 figures

References in corpus (11)

• The electronic properties of graphene
• Two Dimensional Atomic Crystals
• Valley polarization in MoS2 monolayers by optical pumping
• The Valley Hall Effect in MoS2 Transistors
• Graphene Spintronics
• Spin qubits in graphene quantum dots
• Quantitative Determination of the Band-Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors
• Kondo Quantum Criticality of Magnetic Adatoms in Graphene
• The Physics of Kondo Impurities in Graphene
• Kondo effect on the surface of 3D topological insulators: Signatures in scanning tunneling spectroscopy
• Kondo effect and non-Fermi liquid behavior in Dirac and Weyl semimetals