Kondo and charge fluctuation resistivity due to Anderson impurities in graphene

Abstract

Motivated by experiments on ion irradiated graphene, we compute the resistivity of graphene with dilute impurities. In the local moment regime we employ the perturbation theory up to third order in the exchange coupling to determine the behavior at high temperatures within the Kondo model. Resistivity due to charge fluctuations is obtained within the mean field approach on the Anderson impurity model. Due to the linear spectrum of the graphene the Kondo behavior is shown to depend on the gate voltage applied. The location of the impurity on the graphene sheet is an important variable determining its effect on the Kondo scale and resistivity. Our results show that for chemical potential nearby the node the charge fluctuations is responsible for the observed temperature dependence of resistivity while away from the node the spin fluctuations take over. Quantitative agreement with experimental data is achieved if the energy of the impurity level varies linearly with the chemical potential.

17 pages, 15 figures, published version

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• Reentrant Kondo effect in a quantum impurity coupled to a metal-semiconductor hybrid contact
• From Kondo to local singlet state in graphene nanoribbons with magnetic impurities
• Quantum phase transitions into Kondo states in bilayer graphene
• Kondo screening in two-dimensional $p$-type transition-metal dichalcogenides
• Spin relaxation and the Kondo effect in transition metal dichalcogenide monolayers