Origins of anomalous electronic structures of epitaxial graphene on silicon carbide

Abstract

On the basis of first-principles calculations, we report that a novel interfacial atomic structure occurs between graphene and the surface of silicon carbide, destroying the Dirac point of graphene and opening a substantial energy gap there. In the calculated atomic structures, a quasi-periodic $6\times 6$ domain pattern emerges out of a larger commensurate $6\sqrt{3}\times 6\sqrt{3}R30^{\circ }$ periodic interfacial reconstruction, resolving a long standing experimental controversy on the periodicity of the interfacial superstructures. Our theoretical energy spectrum shows a gap and midgap states at the Dirac point of graphene, which are in excellent agreement with the recently-observed anomalous angle-resolved photoemission spectra. Beyond solving unexplained issues of epitaxial graphene, our atomistic study may provide a way to engineer the energy gaps of graphene on substrates.

Additional references added; published version; 4 pages, 4 figures

References in corpus (6)

• Substrate-induced band gap opening in epitaxial graphene
• Epitaxial graphene
• Ab initio Study of Graphene on SiC
• Electron states of mono- and bilayer graphene on SiC probed by STM
• Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC
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