Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene layer on a Wide-Band Gap Semiconductor

Abstract

Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D materials. A hybridized hexagonal boron nitride (h-BN) and graphene lateral structure, a heterogeneous 2D structure, has been fabricated on single-crystal metals or metal foils by chemical vapor deposition (CVD). However, once fabricated on metals, the h-BN/graphene lateral structures require an additional transfer process for device applications, as reported for CVD graphene grown on metal foils. Here, we demonstrate that a single-crystal h-BN/graphene lateral structure can be epitaxially grown on a wide-gap semiconductor, SiC(0001). First, a single-crystal h-BN layer with the same orientation as bulk SiC was grown on a Si-terminated SiC substrate at 850 oC using borazine molecules. Second, when heated above 1150 oC in vacuum, the h-BN layer was partially removed and, subsequently, replaced with graphene domains. Interestingly, these graphene domains possess the same orientation as the h-BN layer, resulting in a single-crystal h-BN/graphene lateral structure on a whole sample area. For temperatures above 1600 oC, the single-crystal h-BN layer was completely replaced by the single-crystal graphene layer. The crystalline structure, electronic band structure, and atomic structure of the h-BN/graphene lateral structure were studied by using low energy electron diffraction, angle-resolved photoemission spectroscopy, and scanning tunneling microscopy, respectively. The h-BN/graphene lateral structure fabricated on a wide-gap semiconductor substrate can be directly applied to devices without a further transfer process, as reported for epitaxial graphene on a SiC substrate.

arXiv comment23 pages, 7 figures

References in corpus (11)

• Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
• Boron nitride substrates for high-quality graphene electronics
• Energy Band Gap Engineering of Graphene Nanoribbons
• Field-effect tunneling transistor based on vertical graphene heterostructures
• Substrate-induced band gap opening in epitaxial graphene
• Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen Intercalation
• Observation of zigzag and armchair edges of graphite using scanning tunneling microscopy and spectroscopy
• Epitaxial graphene transistors on SiC substrates
• Origins of anomalous electronic structures of epitaxial graphene on silicon carbide
• Minimum thermal conductance in graphene and boron nitride superlattice
• Anomalous insulator metal transition in boron nitride-graphene hybrid atomic layers

Cited by in corpus (6)

• Dirac Electrons in a Dodecagonal Graphene Quasicrystal
• Band alignment of two-dimensional lateral heterostructures
• Electronic Structure of Exfoliated and Epitaxial Hexagonal Boron Nitride
• Surfactant-Mediated Epitaxial Growth of Single-Layer Graphene in an Unconventional Orientation on SiC
• Non-linear optics at twist interfaces in h-BN/SiC heterostructures
• Boron nitride on SiC(0001)