Anomalous insulator metal transition in boron nitride-graphene hybrid atomic layers
arXiv:1105.1876 · doi:10.1103/PhysRevB.86.075429
Abstract
The study of two-dimensional (2D) electronic systems is of great fundamental significance in physics. Atomic layers containing hybridized domains of graphene and hexagonal boron nitride (h-BNC) constitute a new kind of disordered 2D electronic system. Magneto-electric transport measurements performed at low temperature in vapor phase synthesized h-BNC atomic layers show a clear and anomalous transition from an insulating to a metallic behavior upon cooling. The observed insulator to metal transition can be modulated by electron and hole doping and by the application of an external magnetic field. These results supported by ab-initio calculations suggest that this transition in h-BNC has distinctly different characteristics when compared to other 2D electron systems and is the result of the coexistence between two distinct mechanisms, namely, percolation through metallic graphene networks and hopping conduction between edge states on randomly distributed insulating h-BN domains.
9 pages, 15 figures
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Cited by in corpus (8)
- Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing
- Electrical and thermal transport in coplanar polycrystalline graphene-hBN heterostructures
- Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene layer on a Wide-Band Gap Semiconductor
- High-performance planar nanoscale dielectric capacitors
- Half-metallicity induced by charge injection in hexagonal boron nitride clusters embedded in graphene
- Dependence of atomic arrangement on length of flat bands in zigzag BC2N nanoribbons
- Localization of metallicity and magnetic properties of graphene and of graphene nanoribbons doped with boron clusters
- Nature of magnetism and transport in BxCyNz thin films: The intriguing role of nitrogen defects in the electronic structure