Gap opening in topological-defect lattices in graphene

Abstract

Ab initio calculations indicate that topological-defect networks in graphene display the full variety of single-particle electronic structures, including Dirac-fermion null-gap semiconductors, as well as metallic and semiconducting systems of very low formation energies with respect to a pristine graphene sheet. Corrugation induced by the topological defects further reduces the energy and tends to reduce the density of states at the Fermi level, to widen the gaps, or even to lead to gap opening in some cases where the parent planar geometry is metallic.

10 pages, 3 figures in reprint format - 4 pages, 3 figures in published version

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Cited by in corpus (8)

• A Two-Dimensional Carbon Semiconductor
• Band structure and gaps of triangular graphene superlattices
• Non-hexagonal-ring defects and structures induced by strain in graphene and in functionalized graphene
• Magnetic states of linear defects in graphene monolayers: effects of strain and interaction
• Rippled nanocarbons from periodic arrangements of reordered bivacancies in graphene or SWCNTs
• Zigzag graphene nanoribbons without inversion symmetry
• On the forbidden graphene's ZO (out-of-plane optic) phononic band-analog vibrational modes in fullerenes
• Insulating Electronic States Near the Dirac Point Arising from Twisted Stacking and Curvature in 3D Nanoporous Graphene