Surface energy engineering of graphene

Abstract

Contact angle goniometry is conducted for epitaxial graphene on SiC. Although only a single layer of epitaxial graphene exists on SiC, the contact angle drastically changes from 69° on SiC substrates to 92° with graphene. It is found that there is no thickness dependence of the contact angle from the measurements of single, bi, and multi layer graphene and highly ordered pyrolytic graphite (HOPG). After graphene is treated with oxygen plasma, the level of damage is investigated by Raman spectroscopy and correlation between the level of disorder and wettability is reported. By using low power oxygen plasma treatment, the wettability of graphene is improved without additional damage, which can solve the adhesion issues involved in the fabrication of graphene devices.

References in corpus (14)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• Two-Dimensional Gas of Massless Dirac Fermions in Graphene
• The Raman Fingerprint of Graphene
• Graphene: Status and Prospects
• Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
• Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
• Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
• Operation of Graphene Transistors at GHz Frequencies
• Graphene Oxidation: Thickness Dependent Etching and Strong Chemical Doping
• Phase Coherent Transport of Charges in Graphene Quantum Billiard
• Raman spectroscopy of epitaxial graphene on a SiC substrate
• Origins of anomalous electronic structures of epitaxial graphene on silicon carbide
• Non-volatile switching in graphene field effect devices

Cited by in corpus (25)

• Surface Energy Engineering for Tunable Wettability through Controlled Synthesis of MoS2
• Effect of oxygen plasma etching on graphene studied with Raman spectroscopy and electronic transport
• On the nature of wettability of van der Waals heterostructures
• Electrical transport properties of graphene on SiO2 with specific surface structures
• On the mechanism of hydrophilicity of graphene
• Water on graphene: Review of recent progress
• Understanding Controls on Interfacial Wetting at Epitaxial Graphene: Experiment and Theory
• Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition
• The role of charge traps in inducing hysteresis: capacitance - voltage measurements on top gated bilayer graphene
• Giant magnetoresistance in single layer graphene flakes with a gate voltage tunable weak antilocalization
• Ultra-Thin Lubricant-Infused Vertical Graphene Nanoscaffolds for High-Performance Dropwise Condensation
• Non-Reciprocal Interactions Induced by Water in Confinement
• Ambipolar bistable switching effect of graphene
• Enhancing the Adhesion of Graphene to Polymer Substrates by Controlled Defect Formation
• Effect of layer number and layer stacking registry on the formation and quantification of defects in graphene
• Study of electromagnetic enhancement for surface enhanced Raman spectroscopy of SiC graphene
• Tunable metal-insulator transitions in bilayer graphene by thermal annealing
• Wetting and energetics in nanoparticle etching of graphene
• Wetting Properties of Graphene Aerogels
• Tunneling characteristics of graphene
• Slip flow regimes in nanofluidics: a universal superexponential model
• Interaction of water with nitrogen-doped graphene
• Universal scaling of resistivity in bilayer graphene
• Enhancement of Superconductivity upon reduction of carrier density in proximitized graphene
• Water structuring at stacked graphene interfaces unveiled by machine-learning molecular dynamics