The role of charge traps in inducing hysteresis: capacitance - voltage measurements on top gated bilayer graphene
arXiv:1208.1831 · doi:10.1063/1.3626854
Abstract
Understanding the origin of hysteresis in the channel resistance from top gated graphene transistors is important for transistor applications. Capacitance - voltage measurements across the gate oxide on top gated bilayer graphene show hysteresis with a charging and discharging time constant of ~100 μs. However, the measured capacitance across the graphene channel does not show any hysteresis, but shows an abrupt jump at a high channel voltage due to the emergence of an order, indicating that the origin of hysteresis between gate and source is due to charge traps present in the gate oxide and graphene interface.
References in corpus (12)
- The electronic properties of graphene
- Measurement of Scattering Rate and Minimum Conductivity in Graphene
- Macroscopic graphene membranes and their extraordinary stiffness
- Surface energy engineering of graphene
- Density of states and zero Landau level probed through capacitance of graphene
- Observation of Anomalous Phonon Softening in Bilayer Graphene
- Quantum capacitance and density of states of graphene
- Measurement of the electronic compressibility of bilayer graphene
- Ambipolar bistable switching effect of graphene
- Tunable metal-insulator transitions in bilayer graphene by thermal annealing
- Compressibility of graphene
- Tunneling characteristics of graphene
Cited by in corpus (9)
- Spin lifetimes exceeding 12 nanoseconds in graphene non-local spin valve devices
- Giant magnetoresistance in single layer graphene flakes with a gate voltage tunable weak antilocalization
- Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement
- Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions
- Hysteretic phenomena in GFET: general theory and experiment
- Universal scaling of resistivity in bilayer graphene
- Dynamic negative capacitance regime in GeTe Rashba ferroelectric
- Large-signal model of the bilayer graphene field-effect transistor targeting radio-frequency applications: theory versus experiment
- Inhomogeneous screening of gate electric field by interface states in graphene FETs