Density of states and zero Landau level probed through capacitance of graphene
arXiv:1005.4793 · doi:10.1103/PhysRevLett.105.136801
Abstract
We report capacitors in which a finite electronic compressibility of graphene dominates the electrostatics, resulting in pronounced changes in capacitance as a function of magnetic field and carrier concentration. The capacitance measurements have allowed us to accurately map the density of states D, and compare it against theoretical predictions. Landau oscillations in D are robust and zero Landau level (LL) can easily be seen at room temperature in moderate fields. The broadening of LLs is strongly affected by charge inhomogeneity that leads to zero LL being broader than other levels.
References in corpus (19)
- The electronic properties of graphene
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Room-Temperature Quantum Hall Effect in Graphene
- Observation of Electron-Hole Puddles in Graphene Using a Scanning Single Electron Transistor
- A self-consistent theory for graphene transport
- Excitonic Effects on the Optical Response of Graphene and Bilayer Graphene
- Carrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons
- Infrared spectroscopy of Landau levels in graphene
- Scanning Tunneling Spectroscopy of Graphene on Graphite
- The Nature of Quantum Hall States near the Charge Neutral Dirac Point in Graphene
- The zero-energy state in graphene in a high magnetic field
- Ab initio GW many-body effects in graphene
- Dissipative Quantum Hall Effect in Graphene near the Dirac Point
- Magnetic oscillations in planar systems with the Dirac-like spectrum of quasiparticle excitations
- Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point
- Quantum capacitance and density of states of graphene
- Quantum-Hall activation gaps in graphene
- Measurement of the electronic compressibility of bilayer graphene
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- Effect of weak impurities on electronic properties of graphene: functional renormalization-group analysis
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