Using Capacitance Methods for Interface Trap Level Density Extraction in Graphene Field-Effect Devices
arXiv:1110.5205
Abstract
Methods of extraction of interface trap level density in graphene field-effect devices from the capacitance-voltage measurements are described and discussed. Interrelation with the graphene Fermi velocity extraction is shown. Similarities and differences in interface trap extraction procedure in graphene and silicon field-effect structures are briefly discussed.
4 pages, 7 figures, a report to MIEL 2012