Vertical Field-Effect Transistor Based on Wavefunction Extension

Abstract

We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly-depleting one layer will extend its wavefunction to overlap the other layer and increase tunnel current. We characterize this effect in a specially designed GaAs/AlGaAs device, observing a tunnel current increase of two orders of magnitude at cryogenic temperatures, and we suggest extrapolations of the design to other material systems such as graphene.

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Cited by in corpus (7)

• Field-effect tunneling transistor based on vertical graphene heterostructures
• Resonant tunnelling and negative differential conductance in graphene transistors
• Synthetic Topological Qubits in Conventional Bilayer Quantum Hall Systems
• Design of a scanning gate microscope in a cryogen-free dilution refrigerator
• Length dependent lattice thermal conductivity of single \& multi layered hexagonal boron nitride: A first-principles study using the Callaway-Klemens \& real space super cell methods
• Thermoelectric Transport in Graphene/$h$-BN/Graphene Heterostructures: A Computational Study
• Local imaging of high mobility two-dimensional electron systems with virtual scanning tunneling microscopy