Contact-less characterizations of encapsulated graphene p-n junctions
arXiv:1702.02071 · doi:10.1103/PhysRevApplied.7.054015
Abstract
Accessing intrinsic properties of a graphene device can be hindered by the influence of contact electrodes. Here, we capacitively couple graphene devices to superconducting resonant circuits and observe clear changes in the resonance- frequency and -widths originating from the internal charge dynamics of graphene. This allows us to extract the density of states and charge relaxation resistance in graphene p-n junctions without the need of electrical contacts. The presented characterizations pave a fast, sensitive and non-invasive measurement of graphene nanocircuits.
4 figures, supplementary information on request
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