199 citations · 893 across the 15 of their papers we have counts for
18 papers
Establishing the role of thickness in LaOBr; an alternative gate dielectric for vdW heterostructures
Isaac Antoine Lagaud, Justin Boddison-Chouinard, Antoine Labbé +9
In electronic devices, the quality of the dielectric material is determined by figures of merit such as the band gap, leakage onset field, breakdown field and the number of built-i…
Capacitance sensing in bilayer graphene with gate reflectometry
Tamás Kalmár, Gergő Fülöp, Bálint Szentpéteri +5
In the search for topological states in bilayer graphene, capacitance measurement methods are widely utilized in bridge type readouts or source-drain reflectometry setups. In this…
Persistence and emergence of quantum defects through pressure-induced phase changes
Alexander J Healey, Alan Salek, Christopher T-K Lew +15
Extreme pressures can transform materials and their properties, but probing these in-situ is made challenging by the small sample volumes and access requirements demanded by diamon…
A Highly Sensitive Diamond NV Magnetometer Using Ramsey Interferometry with a Short Sensor-to-Sample Distance
Yuta Araki, Takeharu Sekiguchi, Yuji Hatano +11
In this study, we developed a diamond quantum magnetometer based on Ramsey interferometry with a short sensor-to-sample distance. Conventional biomagnetic sensors with ensemble nit…
Magnetic-field-induced superconductivity in hexalayer rhombohedral graphene
Jinghao Deng, Jiabin Xie, Hongyuan Li +5
In conventional superconductors, superconductivity is generally suppressed by external magnetic fields due to spin-singlet pairing. Here, we report signatures of in-plane-magnetic-…
Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride
A. Pierret, D. Mele, H. Graef +16
In view of the extensive use of hexagonal boron nitride (hBN) in 2D material electronics, it becomes important to refine its dielectric characterization in terms of low-field permi…
Extraordinary magnetoresistance in encapsulated monolayer graphene devices
Bowen Zhou, Kenji Watanabe, Takashi Taniguchi +1
We report a proof-of-concept study of extraordinary magnetoresistance (EMR) in devices of monolayer graphene encapsulated in hexagonal boron nitride, having metallic edge contacts…
Observation of the spin-orbit gap in bilayer graphene by one-dimensional ballistic transport
L. Banszerus, B. Frohn, T. Fabian +10
We report on measurements of quantized conductance in gate-defined quantum point contacts in bilayer graphene that allow the observation of subband splittings due to spin-orbit cou…
Magneto-spectroscopy of exciton Rydberg states in a CVD grown WSe2 monolayer
A. Delhomme, G. Butseraen, B. Zheng +9
The results of magneto-optical spectroscopy investigations of excitons in a CVD grown monolayer of WSe2 encapsulated in hexagonal boron nitride are presented. The emission linewidt…
A graphene transmon operating at 1 T
J. G. Kroll, W. Uilhoorn, K. L. van der Enden +6
A superconducting transmon qubit resilient to strong magnetic fields is an important component for proposed topological and hybrid quantum computing (QC) schemes. Transmon qubits c…
Imaging electron flow from collimating contacts in graphene
Sagar Bhandari, Gil-Ho Lee, Kenji Watanabe +3
The ballistic motion of electrons in graphene encapsulated in hexagonal boron nitride (hBN) promises exciting opportunities for electron-optics devices. A narrow electron beam is d…
Contact-less characterizations of encapsulated graphene p-n junctions
V. Ranjan, S. Zihlmann, P. Makk +3
Accessing intrinsic properties of a graphene device can be hindered by the influence of contact electrodes. Here, we capacitively couple graphene devices to superconducting resonan…
Ballistic transport in graphene grown by chemical vapor deposition
V. E. Calado, Shou-En Zhu, S. Goswami +5
In this letter we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were don…
Dielectric screening of the Kohn anomaly of graphene on hexagonal boron nitride
F. Forster, A. Molina-Sanchez, S. Engels +5
Kohn anomalies in three-dimensional metallic crystals are dips in the phonon dispersion that are caused by abrupt changes in the screening of the ion-cores by the surrounding elect…
Quantum and classical confinement of resonant states in a trilayer graphene Fabry-Perot interferometer
L. C. Campos, A. F. Young, K. Surakitbovorn +3
The advent of few-layer graphenes has given rise to a new family of two-dimensional systems with emergent electronic properties governed by relativistic quantum mechanics. The mult…
Mechanical cleaning of graphene
A. M. Goossens, V. E. Calado, A. Barreiro +3
Contamination of graphene due to residues from nanofabrication often introduces background doping and reduces charge carrier mobility. For samples of high electronic quality, post-…
Tunneling Spectroscopy of Graphene-Boron Nitride Heterostructures
F. Amet, J. R. Williams, A. G. F. Garcia +4
We report on the fabrication and measurement of a graphene tunnel junction using hexagonal-boron nitride as a tunnel barrier between graphene and a metal gate. The tunneling behavi…
Electronic compressibility of layer polarized bilayer graphene
A. F. Young, C. R. Dean, I. Meric +7
We report on a capacitance study of dual gated bilayer graphene. The measured capacitance allows us to probe the electronic compressibility as a function of carrier density, temper…