Contact Induced Spin Relaxation in Graphene Spin Valves with Al2O3 and MgO Tunnel Barriers
arXiv:1512.02255 · doi:10.1063/1.4943681
Abstract
We investigate spin relaxation in graphene by systematically comparing the roles of spin absorption, other contact-induced effects (e.g. fringe fields, etc.), and bulk spin relaxation for graphene spin valves with MgO barriers, Al2O3 barriers, and transparent contacts. We obtain effective spin lifetimes by fitting the Hanle spin precession data with two models that include or exclude the effect of spin absorption. Results indicate that additional contact-induced spin relaxation other than spin absorption dominates the contact effect. For tunneling contacts, we find reasonable agreement between the two models with median discrepancy of ~20% for MgO and ~10% for Al2O3.
arXiv comment21 pages, 4 figures
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- Two-dimensional flexible high diffusive spin circuits
- Nonlocal Spin Dynamics in the Crossover from Diffusive to Ballistic Transport
- Dry-transferred CVD graphene for inverted spin valve devices
- Modeling the Oblique Spin Precession in Lateral Spin Valves for Accurate Determination of Spin Lifetime Anisotropy: Effect of Finite Contact Resistance and Channel Length
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