147 citations · 430 across the 7 of their papers we have counts for
7 papers
Pressure-induced spin reorientation transition in layered ferromagnetic insulator Cr2Ge2Te6
Zhisheng Lin, Mark Lohmann, Zulfikhar A. Ali +9
Anisotropic magnetoresistance (AMR) of Cr2Ge2Te6 (CGT), a layered ferromagnetic insulator, is investigated under an applied hydrostatic pressure up to 2 GPa. The easy axis directio…
Strong electron-hole symmetric Rashba spin-orbit coupling in graphene/monolayer transition metal dichalcogenide heterostructures
Bowen Yang, Mark Lohmann, David Barroso +7
Despite its extremely weak intrinsic spin-orbit coupling (SOC), graphene has been shown to acquire considerable SOC by proximity coupling with exfoliated transition metal dichalcog…
Observation of magnon-mediated current drag in Pt/yttrium iron garnet/Pt(Ta) trilayers
Junxue Li, Yadong Xu, Mohammed Aldosary +5
Pure spin current, a flow of spin angular momentum without flow of any companying net charge, is generated in two common ways. One makes use of the spin Hall effect in normal metal…
Contact Induced Spin Relaxation in Graphene Spin Valves with Al2O3 and MgO Tunnel Barriers
Walid Amamou, Zhisheng Lin, Jeremiah van Baren +3
We investigate spin relaxation in graphene by systematically comparing the roles of spin absorption, other contact-induced effects (e.g. fringe fields, etc.), and bulk spin relaxat…
Experimental Demonstration of XOR Operation in Graphene Magnetologic Gates at Room Temperature
Hua Wen, Hanan Dery, Walid Amamou +7
We report the experimental demonstration of a magnetologic gate built on graphene at room temperature. This magnetologic gate consists of three ferromagnetic electrodes contacting…
Ferroelectric-like SrTiO3 surface dipoles probed by graphene
Ray Sachs, Zhisheng Lin, Jing Shi
The electrical transport properties of graphene are greatly influenced by its environment. Owing to its high dielectric constant, strontium titanate (STO) is expected to suppress t…
Direct comparison of graphene devices before and after transfer to different substrates
Raymond Sachs, Zhisheng Lin, Patrick Odenthal +2
The entire graphene field-effect-transistor (FET) devices first fabricated on SiO2/Si are peeled from the surface and placed on a different wafer. Both longitudinal and transverse…