Dry-transferred CVD graphene for inverted spin valve devices
arXiv:1709.01364 · doi:10.1063/1.5000545
Abstract
Integrating high-mobility graphene grown by chemical vapor deposition (CVD) into spin transport devices is one of the key tasks in graphene spintronics. We use a van der Waals pickup technique to transfer CVD graphene by hexagonal boron nitride (hBN) from the copper growth substrate onto predefined Co/MgO electrodes to build inverted spin valve devices. Two approaches are presented: (i) a process where the CVD-graphene/hBN stack is first patterned into a bar and then transferred by a second larger hBN crystal onto spin valve electrodes and (ii) a direct transfer of a CVD-graphene/hBN stack. We report record high spin lifetimes in CVD graphene of up to 1.75 ns at room temperature. Overall, the performances of our devices are comparable to devices fabricated from exfoliated graphene also revealing nanosecond spin lifetimes. We expect that our dry transfer methods pave the way towards more advanced device geometries not only for spintronic applications but also for CVD-graphene-based nanoelectronic devices in general where patterning of the CVD graphene is required prior to the assembly of final van der Waals heterostructures.
arXiv comment5 pages, 3 figures
References in corpus (26)
- Van der Waals heterostructures
- Boron nitride substrates for high-quality graphene electronics
- Graphene Spintronics
- Semiconductor Spintronics
- Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals
- Spin Relaxation in Single Layer and Bilayer Graphene
- A new transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride
- Ballistic transport exceeding 28 μm in CVD grown graphene
- Spin lifetimes exceeding 12 nanoseconds in graphene non-local spin valve devices
- Observation of Long Spin Relaxation Times in Bilayer Graphene at Room Temperature
- Towards wafer scale fabrication of graphene based spin valve devices
- Long Distance Spin Transport in High Mobility Graphene on Hexagonal Boron Nitride
- Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field
- Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature
- Determination of the spin-lifetime anisotropy in graphene using oblique spin precession
- Identifying suitable substrates for high-quality graphene-based heterostructures
- Contact induced spin relaxation in Hanle spin precession measurements
- Role of MgO barriers for spin and charge transport in Co/MgO/graphene non-local spin-valve devices
- 98% directional guiding of spin currents with 90 micrometer relaxation length in bilayer graphene using carrier drift
- Spin Relaxation in Single Layer Graphene with Tunable Mobility
- Spin transport in fully hexagonal boron nitride encapsulated graphene
- High mobility dry-transferred CVD bilayer graphene
- Electronic Spin Transport in Dual-Gated Bilayer Graphene
- Contact Induced Spin Relaxation in Graphene Spin Valves with Al2O3 and MgO Tunnel Barriers
- Copper adatoms on graphene: theory of orbital and spin-orbital effects
- Contact-induced charge contributions to non-local spin transport measurements in Co/MgO/graphene devices
Cited by in corpus (6)
- Spin transport in graphene/transition metal dichalcogenide heterostructures
- Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives
- Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures
- Proximity-Induced Spin-Orbit Coupling in Graphene-BiSbTeSe Heterostructures
- Robust Spin Interconnect with Isotropic Spin Dynamics in Chemical Vapour Deposited Graphene Layers and Boundaries
- Charge-induced artifacts in non-local spin transport measurements: How to prevent spurious voltage signals