Proximity-Induced Spin-Orbit Coupling in Graphene-Bi${}_{1.5}$Sb${}_{0.5}$Te${}_{1.7}$Se${}_{1.3}$ Heterostructures

Abstract

The weak intrinsic spin-orbit coupling in graphene can be greatly enhanced by proximity coupling. Here we report on the proximity-induced spin-orbit coupling in graphene transferred by hexagonal boron nitride (hBN) onto the topological insulator Bi${}_{1.5}$Sb${}_{0.5}$Te${}_{1.7}$Se${}_{1.3}$ (BSTS) which was grown on a hBN substrate by vapor solid synthesis. Phase coherent transport measurements, revealing weak localization, allow us to extract the carrier density-dependent phase coherence length $l_{\varphi }$. While $l_{\varphi }$ increases with increasing carrier density in the hBN/graphene/hBN reference sample, it decreases in BSTS/graphene due to the proximity-coupling of BSTS to graphene. The latter behavior results from D'yakonov-Perel-type spin scattering in graphene with a large proximity-induced spin-orbit coupling strength of at least 2.5 meV.

arXiv comment9 pages, 8 figures

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• Heterostructures of graphene and topological insulators Bi${}_2$Se${}_3$, Bi${}_2$Te${}_3$, and Sb${}_2$Te${}_3$
• Single and bilayer graphene on the topological insulator Bi${}_2$Se${}_3$: Electronic and spin-orbit properties from first principles
• Twist-angle dependent proximity induced spin-orbit coupling in graphene/topological insulator heterostructures
• Probing magnetism via spin dynamics in graphene/2D-ferromagnet heterostructures
• Bi${}_2$Se${}_3$ thin films heteroepitaxially grown on $\alpha$-RuCl${}_3$
• Weak localization as probe of spin-orbit-induced spin-split bands in bilayer graphene proximity coupled to WSe${}_2$
• Magnetotransport in graphene/Pb0.24Sn0.76Te heterostructures: finding a way to avoid catastrophe