Magnetotransport in graphene/Pb0.24Sn0.76Te heterostructures: finding a way to avoid catastrophe

Abstract

While heterostructures are ubiquitous tools enabling new physics and device functionalities, the palette of available materials has never been richer. Combinations of two emerging material classes, two-dimensional materials and topological materials, are particularly promising because of the wide range of possible permutations that are easily accessible. Individually, both graphene and Pb0.24Sn0.76Te (PST) are widely investigated for spintronic applications because graphene's high carrier mobility and PST's topologically protected surface states are attractive platforms for spin transport. Here, we combine monolayer graphene with PST and demonstrate a hybrid system with properties enhanced relative to the constituent parts. Using magnetotransport measurements, we find carrier mobilities up to 20,000 cm2/Vs and a magnetoresistance approaching 100 percent, greater than either material prior to stacking. We also establish that there are two distinct transport channels and determine a lower bound on the spin relaxation time of 4.5 ps. The results can be explained using the polar catastrophe model, whereby a high mobility interface state results from a reconfiguration of charge due to a polar/non-polar interface interaction. Our results suggest that proximity induced interface states with hybrid properties can be added to the still growing list of remarkable behaviors in these novel materials.

References in corpus (21)

• Topological Insulators
• Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
• Graphene Spintronics
• Topological Crystalline Insulators in the SnTe Material Class
• Raman Fingerprint of Charged Impurities in Graphene
• A topological crystalline insulator (TCI) phase via topological phase transition and crystalline mirror symmetry
• Spin-Orbit Proximity Effect in Graphene
• Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals
• LaAlO3 stoichiometry found key to electron liquid formation at LaAlO3/SrTiO3 interfaces
• Wannier Center Sheets in Topological Insulators
• Spin transport in high quality suspended graphene devices
• Origin of two-dimensional electron gases at oxide interfaces: insights from theory
• Linear magnetoresistance in topological insulators: Quantum phase coherence effects at high temperatures
• First-principles modeling of electrostatically doped perovskite systems
• Electronic Hybridization of Large-Area Stacked Graphene Films
• Quantum spin Hall states in graphene interacting with WS${}_2$ or WSe${}_2$
• Resonant levels, vacancies and doping in Bi2Te3, Bi2Te2Se and Bi2Se3 tetradymites
• Linear magnetoresistance and surface to bulk coupling in topological insulator thin films
• $(111)$ surface states of SnTe
• Single and bilayer graphene on the topological insulator Bi${}_2$Se${}_3$: Electronic and spin-orbit properties from first principles
• Proximity-Induced Spin-Orbit Coupling in Graphene-Bi${}_{1.5}$Sb${}_{0.5}$Te${}_{1.7}$Se${}_{1.3}$ Heterostructures

Cited by in corpus (1)

• Spintronic Quantum Phase Transition in a $Graphene/P{b}_{0.24}S{n}_{0.76}Te$ Heterostructure with Giant Rashba Spin-Orbit Coupling