199 citations · 554 across the 8 of their papers we have counts for
8 papers
Spintronic Quantum Phase Transition in a Heterostructure with Giant Rashba Spin-Orbit Coupling
Jennifer E. DeMell, Ivan Naumov, Gregory M. Stephen +10
Mechanical stacking of two dissimilar materials often has surprising consequences for heterostructure behavior. In particular, a two-dimensional electron gas (2DEG) is formed in th…
Magnetotransport in graphene/Pb0.24Sn0.76Te heterostructures: finding a way to avoid catastrophe
Gregory M. Stephen, Ivan Naumov, Nicholas A. Blumenschein +9
While heterostructures are ubiquitous tools enabling new physics and device functionalities, the palette of available materials has never been richer. Combinations of two emerging…
Morphology Characterization of Argon-Mediated Epitaxial Graphene on C-face SiC
Joseph L. Tedesco, Glenn G. Jernigan, James C. Culbertson +10
Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramaticall…
Epitaxial Graphene Growth on SiC Wafers
D. Kurt Gaskill, Glenn G. Jernigan, Paul M. Campbell +17
An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Corr…
Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide
Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward +7
Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged…
Graphene formation on SiC substrates
Brenda L. VanMil, Rachael L. Myers-Ward, Joseph L. Tedesco +7
Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial…
Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide
Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward +7
Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the f…
Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale
Joshua A. Robinson, Maxwell Wetherington, Joseph L. Tedesco +11
We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the…