activity
20092023
most citedCorrelating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

199 citations · 554 across the 8 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

5 papers · 1 filter

cond-mat.mtrl-sci2022★ 2 cited

Magnetotransport in graphene/Pb0.24Sn0.76Te heterostructures: finding a way to avoid catastrophe

Gregory M. Stephen, Ivan Naumov, Nicholas A. Blumenschein +9

While heterostructures are ubiquitous tools enabling new physics and device functionalities, the palette of available materials has never been richer. Combinations of two emerging…

cond-mat.mtrl-sci2010★ 81 cited

Morphology Characterization of Argon-Mediated Epitaxial Graphene on C-face SiC

Joseph L. Tedesco, Glenn G. Jernigan, James C. Culbertson +10

Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramaticall…

cond-mat.mtrl-sci2009★ 33 cited

Epitaxial Graphene Growth on SiC Wafers

D. Kurt Gaskill, Glenn G. Jernigan, Paul M. Campbell +17

An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Corr…

cond-mat.mtrl-sci2009★ 34 cited

Graphene formation on SiC substrates

Brenda L. VanMil, Rachael L. Myers-Ward, Joseph L. Tedesco +7

Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial…

cond-mat.mtrl-sci2009★ 199 cited

Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

Joshua A. Robinson, Maxwell Wetherington, Joseph L. Tedesco +11

We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the…