66 citations
- United States Naval Research LaboratoryUS11 papers
- Pennsylvania State UniversityUS2 papers
- Agnitron Technology (United States)US1 paper
- DEVCOM Army Research LaboratoryUS1 paper
- Foundation for Research and Technology HellasGR1 paper
- Howard UniversityUS1 paper
- HRL Laboratories (United States)US1 paper
- Naval Research Laboratory Materials Science and Technology Division1 paper
- North Carolina State UniversityUS1 paper
- Physical Sciences (United States)US1 paper
- Rutgers, The State University of New JerseyUS1 paper
- University at Buffalo, State University of New YorkUS1 paper
11 papers
Magnetotransport in graphene/Pb0.24Sn0.76Te heterostructures: finding a way to avoid catastrophe
Gregory M. Stephen, Ivan Naumov, Nicholas A. Blumenschein +9
While heterostructures are ubiquitous tools enabling new physics and device functionalities, the palette of available materials has never been richer. Combinations of two emerging…
Prominent room temperature valley polarization in WS2/graphene heterostructures grown by chemical vapor deposition
Ioannis Paradisanos, Kathleen M. McCreary, Davoud Adinehloo +8
We examine different cases of heterostructures consisting of WS2 monolayers grown by chemical vapor deposition (CVD) as the optically active material. We show that the degree of va…
Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors
David A. Deen, Ross Miller, Andrei Osinsky +5
A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated tra…
Suppression of Surface-Originated Gate-Lag by a Dual-Channel AlN/GaN HEMT Architecture
David A. Deen, David F. Storm, D. Scott Katzer +2
A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-state related gate lag.…
Unusual magnetoresistance in a topological insulator with a single ferromagnetic barrier
B. D. Kong, Y. G. Semenov, C. Krowne +1
Tunneling surface current through a thin ferromagnetic barrier in a three-dimensional topological insulator is shown to possess an extraordinary response to the orientation of barr…
Space Charge Effects in Field Emission: One Dimensional Theory
Alex Rokhlenko, Kevin Jensen, Joel L. Lebowitz
The current associated with field emission is greatly dependent on the electric field at the emitting electrode. This field is a combination of the electric field in vacuum and the…