66 citations
- United States Naval Research LaboratoryUS11 papers
- Pennsylvania State UniversityUS2 papers
- Agnitron Technology (United States)US1 paper
- DEVCOM Army Research LaboratoryUS1 paper
- Foundation for Research and Technology HellasGR1 paper
- Howard UniversityUS1 paper
- HRL Laboratories (United States)US1 paper
- Naval Research Laboratory Materials Science and Technology Division1 paper
- North Carolina State UniversityUS1 paper
- Physical Sciences (United States)US1 paper
- Rutgers, The State University of New JerseyUS1 paper
- University at Buffalo, State University of New YorkUS1 paper
4 papers · 1 filter
Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors
David A. Deen, Ross Miller, Andrei Osinsky +5
A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated tra…
Suppression of Surface-Originated Gate-Lag by a Dual-Channel AlN/GaN HEMT Architecture
David A. Deen, David F. Storm, D. Scott Katzer +2
A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-state related gate lag.…
Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide
Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward +7
Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged…
Coupling optical and electrical gating for electronic read-out of quantum dot dynamics
Smitha Vasudevan, Kamil Walczak, Avik W. Ghosh
We explore the coherent transfer of electronic signatures from a strongly correlated, optically gated nanoscale quantum dot to a weakly interacting, electrically backgated microsca…