106 citations · 184 across the 5 of their papers we have counts for
5 papers
Strong Coupling of Epsilon-Near-Zero Phonon Polaritons in Polar Dielectric Heterostructures
Nikolai Christian Passler, Christopher R. Gubbin, Thomas Graeme Folland +7
We report the first observation of epsilon near zero (ENZ) phonon polaritons in an ultrathin AlN film fully hybridized with surface phonon polaritons (SPhP) supported by the adjace…
Second Harmonic Generation from Phononic Epsilon-Near-Zero Berreman Modes in Ultrathin Polar Crystal Films
Nikolai Christian Passler, Ilya Razdolski, D. Scott Katzer +4
Immense optical field enhancement was predicted to occur for the Berreman mode in ultrathin films at frequencies in the vicinity of epsilon near zero (ENZ). Here, we report the fir…
Noise Measurements of High-Speed, Light-Emitting GaN Resonant-Tunneling Diodes
E. R. Brown, W-D. Zhang, T. A. Growden +4
We report here the first RF noise measurements on two designs of n-doped GaN/AlN double-barrier resonant tunneling diodes (RTDs), each having a room-temperature negative differenti…
Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors
David A. Deen, Ross Miller, Andrei Osinsky +5
A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated tra…
Suppression of Surface-Originated Gate-Lag by a Dual-Channel AlN/GaN HEMT Architecture
David A. Deen, David F. Storm, D. Scott Katzer +2
A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-state related gate lag.…