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20152018
most citedStrong Coupling of Epsilon-Near-Zero Phonon Polaritons in Polar Dielectric Heterostructures

106 citations · 184 across the 5 of their papers we have counts for

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cond-mat.mes-hall2015★ 13 cited

Suppression of Surface-Originated Gate-Lag by a Dual-Channel AlN/GaN HEMT Architecture

David A. Deen, David F. Storm, D. Scott Katzer +2

A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-state related gate lag.…