most citedPolarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

10 citations · 10 across the 1 of their papers we have counts for

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cond-mat.mes-hall2018

Noise Measurements of High-Speed, Light-Emitting GaN Resonant-Tunneling Diodes

E. R. Brown, W-D. Zhang, T. A. Growden +4

We report here the first RF noise measurements on two designs of n-doped GaN/AlN double-barrier resonant tunneling diodes (RTDs), each having a room-temperature negative differenti…

cond-mat.mes-hall2016★ 10 cited

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

David A. Deen, Ross Miller, Andrei Osinsky +5

A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated tra…