306 citations · 680 across the 8 of their papers we have counts for
9 papers
Measurements and Numerical Calculations of Thermal Conductivity to Evaluate the Quality of β-Gallium Oxide Thin Films Grown on Sapphire and Silicon Carbide by Molecular Beam Epitaxy
Diego Vaca, Matthew Barry, Luke Yates +8
We report a method to obtain insights into lower thermal conductivity of β-Ga2O3 thin films grown by molecular beam epitaxy (MBE) on c-plane sapphire and 4H-SiC substrates. We comp…
Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics
Vikrant J. Gokhale, Brian P. Downey, D. Scott Katzer +4
Solid-state quantum acoustodynamic (QAD) systems provide a compact platform for quantum information storage and processing by coupling acoustic phonon sources with superconducting…
Strong Coupling of Epsilon-Near-Zero Phonon Polaritons in Polar Dielectric Heterostructures
Nikolai Christian Passler, Christopher R. Gubbin, Thomas Graeme Folland +7
We report the first observation of epsilon near zero (ENZ) phonon polaritons in an ultrathin AlN film fully hybridized with surface phonon polaritons (SPhP) supported by the adjace…
Second Harmonic Generation from Phononic Epsilon-Near-Zero Berreman Modes in Ultrathin Polar Crystal Films
Nikolai Christian Passler, Ilya Razdolski, D. Scott Katzer +4
Immense optical field enhancement was predicted to occur for the Berreman mode in ultrathin films at frequencies in the vicinity of epsilon near zero (ENZ). Here, we report the fir…
Controlling the Infrared Dielectric Function through Atomic-Scale Heterostructures
Daniel C. Ratchford, Christopher J. Winta, Ioannis Chatzakis +20
Surface phonon polaritons (SPhPs) - the surface-bound electromagnetic modes of a polar material resulting from the coupling of light with optic phonons - offer immense technologica…
Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors
David A. Deen, Ross Miller, Andrei Osinsky +5
A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated tra…