306 citations · 680 across the 8 of their papers we have counts for
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cond-mat.mes-hall2016★ 10 cited
Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors
David A. Deen, Ross Miller, Andrei Osinsky +5
A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated tra…
cond-mat.mes-hall2015★ 13 cited
Suppression of Surface-Originated Gate-Lag by a Dual-Channel AlN/GaN HEMT Architecture
David A. Deen, David F. Storm, D. Scott Katzer +2
A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-state related gate lag.…