199 citations · 468 across the 5 of their papers we have counts for
5 papers
Epitaxial Graphene Growth on SiC Wafers
D. Kurt Gaskill, Glenn G. Jernigan, Paul M. Campbell +17
An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Corr…
Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide
Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward +7
Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged…
Graphene formation on SiC substrates
Brenda L. VanMil, Rachael L. Myers-Ward, Joseph L. Tedesco +7
Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial…
Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide
Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward +7
Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the f…
Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale
Joshua A. Robinson, Maxwell Wetherington, Joseph L. Tedesco +11
We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the…