activity
20102026
most citedSilicon vacancy center in 4H-SiC: Electronic structure and spin-photon interfaces

111 citations · 514 across the 21 of their papers we have counts for

collaborators

23 papers

cond-mat.supr-con2026

Superconductivity in Noncentrosymmetric NbReSi: Beyond Harmonic and Adiabatic Limits

Shashi B. Mishra, Sohair ElMeligy, Pratibha Dev

The noncentrosymmetric superconductor NbReSi (Tc=6.5 K) is being actively explored for unconventional pairing that is allowed by its broken inversion symmetry. Despite broad experi…

cond-mat.mtrl-sci2025★ 2 cited

Tuning spin currents in collinear antiferromagnets and altermagnets

Sajjan Sheoran, Pratibha Dev

Spin current generation through non-relativistic spin splittings, found in uncompensated magnets and d-wave altermagnets, is desirable for low-power spintronics. Such spin currents…

cond-mat.other2025

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC

Samuel G. Carter, Infiter Tathfif, Charity Burgess +3

The silicon vacancy () in 4H-SiC at its cubic site (V2-center) has shown significant promise for quantum technologies, due to coherent spin states, the mature material syst…

cond-mat.mtrl-sci2025★ 47 cited

Spontaneous Anomalous Hall Effect in Two-Dimensional Altermagnets

Sajjan Sheoran, Pratibha Dev

The anomalous Hall effect (AHE) is an efficient tool for detecting the Néel vector in collinear compensated magnets with spin-split bands, known as altermagnets (AMs). Here, we est…

cond-mat.mtrl-sci2024

Robust Aluminum Nitride Passivation of Silicon Carbide with Near-Surface Quantum Emitters for Quantum Computing and Sensing Applications

Cyrille Armel Sayou Ngomsi, Sai Krishna Narayanan, Pratibha Dev

Silicon carbide (SiC) hosts a number of point defects that are being explored as single-photon emitters for quantum applications. Unfortunately, these quantum emitters lose their p…

cond-mat.mtrl-sci2024★ 5 cited

Optimum surface-passivation schemes for near-surface spin defects in silicon carbide

Cyrille Armel Sayou Ngomsi, Tamanna Joshi, Pratibha Dev

Spin-active defects in silicon carbide (SiC) are promising quantum light sources for realizing scalable quantum technologies. In different applications, these photoluminescent defe…