Fingerprinting quantum emitters in hexagonal boron nitride using strain

Abstract

Two dimensional van der Waals crystals and their heterostructures provide an exciting alternative to bulk wide bandgap semiconductors as hosts of single photon emitters. Amongst different layered materials, bright and robust defect-based single photon emitters have been observed within hexagonal boron nitride, a layered wide-bandgap semiconductor. Despite research efforts to date, the identities of the deep defects responsible for quantum emissions in hexagonal boron nitride remain unknown. In this theoretical work, I demonstrate that the strain-induced changes in emission frequencies depend on: (i) the detailed nature of the defect states involved in the optical excitations, and (ii) the rich boron chemistry that results in complex interactions between boron atoms. As each defect shows a distinct response to the strain, it can be used not only to tune emission frequencies, but also to identify the quantum emitters in hexagonal boron nitride.

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• Fabrication and deterministic transfer of high quality quantum emitter in hexagonal boron nitride
• Atomic Localization of Quantum Emitters in Multilayer Hexagonal Boron Nitride

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• Tailoring the Emission Wavelength of Color Centers in Hexagonal Boron Nitride for Quantum Applications
• Probing the Optical Dynamics of Quantum Emitters in Hexagonal Boron Nitride
• Doping-limitations of cubic boron nitride: effects of unintentional defects on shallow doping
• Defect-induced $4p$-magnetism in layered platinum diselenide
• Site-dependent properties of quantum emitters in nanostructured silicon carbide
• Optimum surface-passivation schemes for near-surface spin defects in silicon carbide
• First-principles computational methods for quantum defects in two-dimensional materials: A perspective
• Robust Aluminum Nitride Passivation of Silicon Carbide with Near-Surface Quantum Emitters for Quantum Computing and Sensing Applications