Theory of Spin-Conserving Excitation of the Center in Diamond
arXiv:0903.4078 · doi:10.1103/PhysRevLett.103.186404
Abstract
The negatively charged nitrogen-vacancy defect ( center) in diamond is an important atomic-scale structure that can be used as a qubit in quantum computing and as a marker in biomedical applications. Its usefulness relies on the ability to optically excite electrons between well-defined gap states, which requires clear and detailed understanding of the relevant states and excitation processes. Here we show that by using hybrid density-functional-theory calculations in a large supercell we can reproduce the zero-phonon line and the Stokes and anti-Stokes shifts, yielding a complete picture of the spin-conserving excitation of this defect.
4 pages, 2 figures
References in corpus (4)
- Anisotropic interactions of a single spin and dark-spin spectroscopy in diamond
- Ab initio supercell calculations on nitrogen-vacancy center in diamond: its electronic structure and hyperfine tensors
- Band Offsets at Semiconductor-Oxide Interfaces from Hybrid Density Functional Calculations
- Polarization and readout of coupled single spins in diamond
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