Coherent control of an ultrabright single spin in hexagonal boron nitride at room temperature

Abstract

Hexagonal boron nitride (hBN) is a remarkable two-dimensional (2D) material that hosts solid-state spins and has great potential to be used in quantum information applications, including quantum networks. However, in this application, both the optical and spin properties are crucial for single spins but have not yet been discovered simultaneously for hBN spins. Here, we realize an efficient method for arraying and isolating the single defects of hBN and use this method to discover a new spin defect with a high probability of 85%. This single defect exhibits outstanding optical properties and an optically controllable spin, as indicated by the observed significant Rabi oscillation and Hahn echo experiments at room temperature. First principles calculations indicate that complexes of carbon and oxygen dopants may be the origin of the single spin defects. This provides a possibility for further addressing spins that can be optically controlled.

10 pages, 5 figures

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Cited by in corpus (25)

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• Isotope engineering for spin defects in van der Waals materials
• Isotopic control of the boron-vacancy spin defect in hexagonal boron nitride
• Symmetric carbon tetramers forming chemically stable spin qubits in hBN
• Room-Temperature High-Purity Single Photon Emission from Carbon-Doped Boron Nitride Thin Films
• Symmetry of the Hyperfine and Quadrupole Interactions of Boron Vacancies in a Hexagonal Boron Nitride
• Ultrafast phonon-mediated dephasing of color centers in hexagonal boron nitride probed by electron beams
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• Creation and Microscopic Origins of Single-Photon Emitters in Transition Metal Dichalcogenides and Hexagonal Boron Nitride
• Carbon-based single photon emitters in hexagonal boron nitride with triplet ground state
• Coherent Spins in van der Waals Semiconductor GeS2 at Ambient Conditions
• Photo-dynamics of quantum emitters in aluminum nitride
• Magnetic-field dependent VB- spin decoherence in hexagonal boron nitrides: A first-principles study
• Radiofrequency receiver based on isotropic solid-state spins
• Quantum Sensing Enhancement through a Nuclear Spin Register in Nitrogen-Vacancy Centers in Diamond
• Nanoscale positioning and in-situ enhancement of single G center in silicon using a fluorescence-localization technique
• A charge transfer mechanism for optically addressable solid-state spin pairs
• Temperature-Dependent Emission Spectroscopy of Quantum Emitters in Hexagonal Boron Nitride
• Systematic investigation of dynamic nuclear polarization with boron vacancy in hexagonal boron nitride
• Optical spin defect pairs in cubic boron nitride