Excited-state spectroscopy of spin defects in hexagonal boron nitride

Abstract

We used optically detected magnetic resonance (ODMR) technique to directly probe electron-spin resonance transitions in the excited state of negatively-charged boron vacancy (VB-) defects in hexagonal boron nitride (hBN) at room temperature. The data showed that the excited state has a zero-field splitting of ~ 2.1 GHz, a g factor similar to the ground state and two types of hyperfine splitting ~ 90 MHz and ~ 18.8 MHz respectively. Pulsed ODMR experiments were conducted to further verify observed resonant peaks corresponding to spin transitions in the excited state. In addition, negative peaks in photoluminescence and ODMR contrast as a function of magnetic field magnitude and angle at level anti-crossing were observed and explained by coherent spin precession and anisotropic relaxation. This work provided significant insights for studying the structure of VB- excited states, which might be used for quantum information processing and nanoscale quantum sensing.

References in corpus (6)

• Two-Dimensional Material Nanophotonics
• Dynamic polarization of single nuclear spins by optical pumping of NV color centers in diamond at room temperature
• Excited-state spectroscopy using single-spin manipulation in diamond
• Excited-state spectroscopy of single NV defects in diamond using optically detected magnetic resonance
• High-contrast plasmonic-enhanced shallow spin defects in hexagonal boron nitride for quantum sensing
• Coupling spin defects in hexagonal boron nitride to monolithic bullseye cavities

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