Excited-state optically detected magnetic resonance of spin defects in hexagonal boron nitride

Abstract

Negatively charged boron vacancy (VB-) centers in hexagonal boron nitride (hBN) are promising spin defects in a van der Waals crystal. Understanding the spin properties of the excited state (ES) is critical for realizing dynamic nuclear polarization. Here, we report zero-field splitting in the ES of DES = 2160 MHz and an optically detected magnetic resonance (ODMR) contrast of 12% at cryogenic temperature. The ES has a g-factor similar to the ground state. The ES photodynamics is further elucidated by measuring the level anti-crossing of the VB- defects under varying external magnetic fields. In contrast to nitrogen vacancy (NV-) centers in diamond, the emission change caused by excited-state level anti-crossing (ESLAC) is more prominent at cryo-temperature than at room temperature. Our results provide important information for utilizing the spin defects of hBN in quantum technology.

References in corpus (32)

• Room Temperature Initialisation and Readout of Intrinsic Spin Defects in a Van der Waals Crystal
• Tunable and high purity room-temperature single photon emission from atomic defects in hexagonal boron nitride
• A 10-qubit solid-state spin register with quantum memory up to one minute
• Dynamic polarization of single nuclear spins by optical pumping of NV color centers in diamond at room temperature
• Anisotropic interactions of a single spin and dark-spin spectroscopy in diamond
• Layer Hall effect in a 2D topological Axion antiferromagnet
• One-second coherence for a single electron spin coupled to a multi-qubit nuclear-spin environment
• Sub-nanoscale Temperature, Magnetic Field and Pressure sensing with Spin Centers in 2D hexagonal Boron Nitride
• Low temperature studies of the excited-state structure of Nitrogen-Vacancy color centers in diamond
• Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride
• Position-controlled quantum emitters with reproducible emission wavelength in hexagonal boron nitride
• Room Temperature Coherent Control of Spin Defects in hexagonal Boron Nitride
• Excited-state spectroscopy using single-spin manipulation in diamond
• Excited-state spectroscopy of single NV defects in diamond using optically detected magnetic resonance
• Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties
• Phonon-Induced Population Dynamics and Intersystem Crossing in Nitrogen-Vacancy Centers
• Spin-Dependent Quantum Emission in Hexagonal Boron Nitride at Room Temperature
• Single spin resonance in a van der Waals embedded paramagnetic defect
• High-contrast plasmonic-enhanced shallow spin defects in hexagonal boron nitride for quantum sensing
• Probing and manipulating embryogenesis via nanoscale thermometry and temperature control
• Optical polarization of nuclear spins in silicon carbide
• Wide Field Imaging of van der Waals Ferromagnet Fe3GeTe2 by Spin Defects in Hexagonal Boron Nitride
• Femtosecond Laser Writing of Spin Defects in Hexagonal Boron Nitride
• All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide
• Photoluminescence and photochemistry of the $V_B^{-}$ defect in hexagonal boron nitride
• Optical polarization of nuclear ensembles in diamond
• Time-averaging within the excited state of the nitrogen-vacancy centre in diamond
• Theoretical model of the dynamic spin polarization of nuclei coupled to paramagnetic point defects in diamond and silicon carbide
• Excited State Spectroscopy of Boron Vacancy Defects in Hexagonal Boron Nitride using Time-Resolved Optically Detected Magnetic Resonance
• Optically Enhanced Electric Field Sensing Using Nitrogen-Vacancy Ensembles
• Dynamic ${}^{14}\mathrm{N}$ nuclear spin polarization in nitrogen-vacancy centers in diamond
• Spatiotemporal Mapping of Photocurrent in a Monolayer Semiconductor Using a Diamond Quantum Sensor

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• The hBN defects database: a theoretical compilation of color centers in hexagonal boron nitride
• Quantum sensing of paramagnetic spins in liquids with spin qubits in hexagonal boron nitride
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• Robust Nuclear Spin Polarization via Ground-State Level Anti-Crossing of Boron Vacancy Defects in Hexagonal Boron Nitride
• Active spin lattice hyperpolarization: Application to hexagonal boron nitride color centers
• Creation and Microscopic Origins of Single-Photon Emitters in Transition Metal Dichalcogenides and Hexagonal Boron Nitride
• Intrinsic high-fidelity spin polarization of charged vacancies in hexagonal boron nitride
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• Quantifying the creation of negatively charged boron vacancies in He-ion irradiated hexagonal boron nitride
• Room-Temperature Electrical Readout of Spin Defects in van der Waals Materials
• Spin-State Selective Excitation in Spin Defects of Hexagonal Boron Nitride
• Room-temperature hybrid 2D-3D quantum spin system for enhanced magnetic sensing and many-body dynamics
• Intermediate Excited State Relaxation Dynamics of Boron Vacancy Spin Defects in Hexagonal Boron Nitride
• Insights into the Nature of Quantum Emitters in Electron-Irradiated hexagonal Boron Nitride
• Multi-wavelength Spin Dynamics of Defects in Hexagonal Boron Nitride
• High Magnetoresistance Ratio on hBN Boron-Vacancy/Graphene Magnetic Tunnel Junction