High Magnetoresistance Ratio on hBN Boron-Vacancy/Graphene Magnetic Tunnel Junction

Abstract

We presents a new strategy to create a van der Waals-based magnetic tunnel junction (MTJ) that consists of a three-atom layer thickness of graphene (Gr) sandwiched with hexagonal boron nitride (hBN) by introducing a monoatomic Boron vacancy in both hBN layers. The magnetic properties and electronic structure of the system were investigated using density functional theory (DFT), while the transmission probability of the MTJ was investigated using the Landauer-Büttiker formalism within the non-equilibrium Green function method. The Stoner gap was found to be created between the spin-majority channel and the spin-minority channel on LDOS of the hBN monoatomic boron-vacancy (V${}_B$) near the vicinity of Fermi energy, creating a possible control of the spin valve by considering two different magnetic allignment of hBN(V${}_B$) layers, anti-parallel and parallel configuration. The results of the transmission probability calculation showed a high electron transmission in the parallel configuration of the hBN(V${}_B$) layers and a low transmission when the antiparallel configuration was considered. A high TMR ratio of approximately 400% was observed when comparing the antiparallel and parallel configuration of hBN(V${}_B$) layers in the hBN (V${}_B$)/Gr/hBN(V${}_B$), giving the highest TMR for the thinnest MTJ system.

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