activity
20192024
most citedUltimate In-plane Magnetoresistance Ratio of Graphene by Controlling the Gapped Dirac Cone through Pseudospin

3 citations · 3 across the 5 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2024

Impact of Monoatomic Vacancies in 2D Materials on the Performance of Magnetic Tunnel Junction Devices: Insights from Configurations and Interface Interactions

Halimah Harfah, Yusuf Wicaksono, Gagus K. Sunnardianto +2

We investigate the impact of monoatomic vacancies in 2D materials on the performance of magnetic tunnel junction (MTJ) devices using first-principles calculations within Density Fu…

cond-mat.mes-hall2023

High Magnetoresistance Ratio on hBN Boron-Vacancy/Graphene Magnetic Tunnel Junction

Halimah Harfah, Yusuf Wicaksono, Gagus Ketut Sunnardianto +2

We presents a new strategy to create a van der Waals-based magnetic tunnel junction (MTJ) that consists of a three-atom layer thickness of graphene (Gr) sandwiched with hexagonal b…

cond-mat.mtrl-sci2022

Discovery of nanographene for hydrogen storage solving low reversibility issues

Gagus Ketut Sunnardianto, Yusuf Wicaksono, Halimah Harfah +1

We found good reversibility of hydrogen uptake-release in vacancy-centered hexagonal armchair nanographene (VANG) based on density functional theory calculation. VANG has a triply…

cond-mat.mes-hall2021★ 3 cited

Ultimate In-plane Magnetoresistance Ratio of Graphene by Controlling the Gapped Dirac Cone through Pseudospin

Yusuf Wicaksono, Halimah Harfah, Gagus Ketut Sunnardianto +2

$\require{mediawiki-texvc}$ A theoretical study is presented on the in-plane conductance of graphene that is partially sandwiched by Ni(111) slabs with a finite size and atom-scale…

cond-mat.mtrl-sci2021

High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission

Halimah Harfah, Yusuf Wicaksono, Gagus Ketut Sunnardianto +2

This work presents an ab-initio study of a few-layers hexagonal boron nitride (hBN) and hBN-graphene heterostructure sandwiched between Ni(111) layers. The aim of this study is to…

cond-mat.mes-hall2019

Spin-Current Control by Induced Electric-Polarization Reversal in Ni/hBN/Ni: A Cross-Correlation Material

Halimah Harfah, Yusuf Wicaksono, Muhammad Aziz Majidi +1

We undertook an ab-initio study of hexagonal boron nitride (hBN) sandwiched between Ni(111) layers to examine the interface of this material structure. We considered Ni(111)/hBN/Ni…