An ultrastable and robust single-photon emitter in hexagonal boron nitride
arXiv:1906.00493 · doi:10.1016/j.physe.2020.114251
Abstract
Quantum emitters in van der Waals (vdW) materials have attracted lots of attentions in recent years, and shown great potentials to be fabricated as quantum photonic nanodevices. Especially, the single photon emitter (SPE) in hexagonal boron nitride (hBN) emerges with the outstanding room-temperature quantum performances, whereas the ubiquitous blinking and bleaching restrict its practical applications and investigations critically. The blister in vdW materials possessing stable structure can modify the local bandgap by strains on nanoscale, which is supposed to have the ability to fix this photostability problem. Here we report a blister-induced high-purity SPE in hBN under ambient conditions showing stable quantum-emitting performances, and no evidence of blinking and bleaching for one year. Remarkably, we observe the nontrivial successive activating and quenching dynamical process of the fluorescent defects at the SPE region under low pressures for the first time, and the robust recoverability of the SPE after turning back to the atmospheric pressure. The pressure-tuned performance indicates the SPE origins from the lattice defect isolated and activated by the strain induced from the blister, and sheds lights on the future high-performance quantum sources based on hBN.
11 pages, 6 figures
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- Coherent dynamics of multi-spin centers in hexagonal boron nitride
- Polarization and localization of single-photon emitters in hexagonal boron nitride wrinkles
- Sensitive single-photon test of extended quantum theory with 2D hexagonal boron nitride
- Laser Direct Writing of Visible Spin Defects in Hexagonal Boron Nitride for Applications in Spin-Based Technologies
- Comprehensive scheme for identifying defects in solid-state quantum systems
- Advancing the hBN Defects Database through Photophysical Characterization of Bulk hBN
- Temperature-dependent energy-level shifts of Spin Defects in hexagonal Boron Nitride
- as a 2 eV Single-Photon Emitter Candidate in Hexagonal Boron Nitride
- Properties of quantum emitters in different hBN sample types particularly suited for nanophotonic integration
- Nuclear Spin-Mediated Relaxation Mechanisms of the V Center in hBN