Piezoelectricity in monolayer hexagonal boron nitride
arXiv:1911.09134 · doi:10.1002/adma.201905504
Abstract
Two-dimensional (2D) hexagonal boron nitride (hBN) is a wide-bandgap van der Waals crystal with a unique combination of properties, including exceptional strength, large oxidation resistance at high temperatures and optical functionalities. Furthermore, in recent years hBN crystals have become the material of choice for encapsulating other 2D crystals in a variety of technological applications, from optoelectronic and tunnelling devices to composites. Monolayer hBN, which has no center of symmetry, has been predicted to exhibit piezoelectric properties, yet experimental evidence is lacking. Here, by using electrostatic force microscopy, we observed this effect as a strain-induced change in the local electric field around bubbles and creases, in agreement with theoretical calculations. No piezoelectricity was found in bilayer and bulk hBN, where the centre of symmetry is restored. These results add piezoelectricity to the known properties of monolayer hBN, which makes it a desirable candidate for novel electromechanical and stretchable optoelectronic devices, and pave a way to control the local electric field and carrier concentration in van der Waals heterostructures via strain. The experimental approach used here also shows a way to investigate the piezoelectric properties of other materials on the nanoscale by using electrostatic scanning probe techniques.
References in corpus (14)
- 2D materials and van der Waals heterostructures
- Boron nitride substrates for high-quality graphene electronics
- Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
- Born-Oppenheimer Breakdown in Graphene
- Mechanical Properties of Atomically Thin Boron Nitride and the Role of Interlayer Interactions
- Strong Oxidation Resistance of Atomically Thin Boron Nitride Nanosheets
- Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals
- Atomically Thin Boron Nitride: Unique Properties and Applications
- Graphene bubbles on a substrate : Universal shape and van der Waals pressure
- Electric Polarization of Heteropolar Nanotubes as a Geometric Phase
- Visualizing Strain-induced Pseudo magnetic Fields in Graphene through an hBN Magnifying Glass
- Strain superlattices and macroscale suspension of Graphene induced by corrugated substrates
- Piezoelectricity and valley Chern number in inhomogeneous hexagonal 2D crystals
- Piezoelectricity in planar boron nitride via a geometric phase
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