Quantum Hall Effect at 0.002T
arXiv:2601.16015 · doi:10.1038/s41467-026-68695-8
Abstract
Graphene enables precise carrier-density control via gating, making it an ideal platform for studying electronic interactions. However, sample inhomogeneities often limit access to the low-density regimes where these interactions dominate. Enhancing carrier mobility is therefore crucial for exploring fundamental properties and developing device applications. Here, we demonstrate a significant reduction in external inhomogeneity using a double-layer graphene architecture separated by an ultra-thin hexagonal boron nitride layer. Mutual screening between the layers reduces scattering from random Coulomb potentials, resulting in a quantum mobility exceeding. Shubnikov de-Haas oscillations emerge at magnetic fields below 1 mT, while integer quantum Hall features are observed at 0.002T. Furthermore, we identify a fractional quantum Hall plateau at a filling factor of at 2T. These results demonstrate the platform's suitability for investigating strongly correlated electronic phases in graphene-based heterostructures.
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