Ultra-clean assembly of van der Waals heterostructures
arXiv:2308.13484 · doi:10.1038/s41928-023-01075-y
Abstract
Layer-by-layer assembly of van der Waals (vdW) heterostructures underpins new discoveries in solid state physics, material science and chemistry. Despite the successes, all current 2D material (2DM) transfer techniques rely on the use of polymers which limit the cleanliness, ultimate electronic performance, and potential for optoelectronic applications of the heterostructures. In this article, we present a novel polymer-free platform for rapid and facile heterostructure assembly which utilises re-usable flexible silicon nitride membranes. We demonstrate that this allows fast and reproducible production of 2D heterostructures using both exfoliated and CVD-grown materials with perfect interfaces free from interlayer contamination and correspondingly excellent electronic behaviour, limited only by the size and intrinsic quality of the crystals used. Furthermore, removing the need for polymeric carriers allows new possibilities for vdW heterostructure fabrication: assembly at high temperatures up to 600°C, and in different environments including ultra-high vacuum (UHV) and when the materials are fully submerged in liquids. We demonstrate UHV heterostructure assembly for the first time, and show the reliable creation of graphene moiré superlattices with more than an order of magnitude improvement in their structural homogeneity. We believe that broad adaptation of our novel inorganic 2D materials assembly strategy will allow realisation of the full potential of vdW heterostructures as a platform for new physics and advanced optoelectronic technologies.
23 pages, 4 figures
References in corpus (12)
- Boron nitride substrates for high-quality graphene electronics
- Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
- Micrometer-scale ballistic transport in encapsulated graphene at room temperature
- High Electron Mobility, Quantum Hall Effect and Anomalous Optical Response in Atomically Thin InSe
- Graphene Segregated on Ni surfaces and Transferred to Insulators
- Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
- Single-crystal hexagonal boron nitride monolayer epitaxially grown on Cu (111) thin film across a wafer
- Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials
- Observing imperfection in atomic interfaces for van der Waals heterostructures
- Ultra-thin van der Waals crystals as semiconductor quantum wells
- Graphene hot-electron light bulb: incandescence from hBN-encapsulated graphene in air
- High quality electrostatically defined hall bars in monolayer graphene
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