Electroluminescence from multi-particle exciton complexes in transition metal dichalcogenide semiconductors

Abstract

Light emission from higher-order correlated excitonic states has been recently reported in hBN-encapsulated monolayer WSe2 and WS2 upon optical excitation. These exciton complexes are found to be bound states of excitons residing in opposite valleys in momentum space, a promising feature that could be employed in valleytronics or other novel optoelectronic devices. However, electrically-driven light emission from such exciton species is still lacking. Here we report electroluminescence from bright and dark excitons, negatively charged trions and neutral and negatively charged biexcitons, generated by a pulsed gate voltage, in hexagonal boron nitride encapsulated monolayer WSe2 and WS2 with graphene as electrode. By tailoring the pulse parameters we are able to tune the emission intensity of the different exciton species in both materials. We find the electroluminescence from charged biexcitons and dark excitons to be as narrow as 2.8 meV.

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Cited by in corpus (37)

• Filtering the photoluminescence spectra of atomically thin semiconductors with graphene
• Ultra-clean assembly of van der Waals heterostructures
• Near-unity light absorption in a monolayer WS2 van der Waals heterostructure cavity
• Probing and manipulating valley coherence of dark excitons in monolayer WSe${}_2$
• Exciton optics, dynamics and transport in atomically thin semiconductors
• Opportunities in Electrically Tunable 2D Materials Beyond Graphene: Recent Progress and Future Outlook
• Exciton-polaron interactions in monolayer WS${}_2$
• Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De-pinning of van der Waals Contacts
• Excitonic complexes in $n$-doped WS${}_2$ monolayer
• Magnetooptics of layered two-dimensional semiconductors and heterostructures: progress and prospects
• Nanoscale modification of WS${}_2$ trion emission by its local electromagnetic environment
• Neutral and charged dark excitons in monolayer WS${}_2$
• Anomalous Stark Shift of Excitonic Complexes in Monolayer Semiconductor
• Direct Measurement of Biexcitons in Monolayer WS2
• Valley polarization of singlet and triplet trions in WS${}_2$ monolayer in magnetic fields
• Up- and Down-Conversion between Intra- and Inter-Valley Excitons in Waveguide Coupled Monolayer WSe2
• Monolayer WS${}_2$ electro- and photo-luminescence enhancement by TFSI treatment
• Interplay of Excitonic Complexes in $p$-Doped WSe${}_2$ Monolayers
• Radially polarized light beams from spin-forbidden dark excitons and trions in monolayer WSe${}_2$
• Probing biexciton in monolayer WS${}_2$ through controlled many-body interaction
• The effect of dielectric environment on the brightening of neutral and charged dark excitons in WSe${}_2$ monolayer
• Engineering robust strain transmission in van der Waals heterostructure devices
• Trion-trion annihilation in monolayer WS${}_2$
• Theory of the Coherent Response of Magneto-Excitons and Magneto-Biexcitons in Monolayer Transition Metal Dichalcogenides
• Light sources with bias tunable spectrum based on van der Waals interface transistors
• Valley Phenomena in the Candidate Phase Change Material WSe${}_{2(1-x)}$Te${}_{2x}$
• Charge-carrier complexes in monolayer semiconductors
• Effects of Floquet Engineering on the Coherent Exciton Dynamics in Monolayer WS${}_2$
• Raman scattering excitation in monolayers of semiconducting transition metal dichalcogenides
• Spin/Valley pumping of resident electrons in WSe2 and WS2 monolayers
• Multidimensional sensing of proximity magnetic fields via intrinsic activation of dark excitons in WSe${}_2$/CrCl${}_3$ heterostructure
• Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier doping
• Symmetric Domain Segmentation in WS2 Flakes: Correlating spatially resolved photoluminescence, conductance with valley polarization
• Extremely high excitonic $g$-factors in 2D crystals by alloy-induced admixing of band states
• Pulsed Electroluminescence in a Dopant-free Gateable Semiconductor
• Layered semiconductors integrated with polyimide thin films for high-quality valleytronic and quantum-photonic systems
• Valley-controlled many-body exciton interactions in monolayer WSe${}_2$ phototransistors